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Chemistry for Sustainable Development

2000 year, number 1-2

Latest Molecular Layer Epitaxy Technology

Jun-Ichi Nishizawa ,Toru Kurabayashi*
Semiconductor Research Institute of Semiconductor Research Foundation,
Kawauchi, Aoba-ku, Sendai 980-0862 (Japan)
*Telecommunications Advancement Organization, Sendai Research Centre,
Koeji 19, Nagamachi-Aza Aoba-ku, Sendai 980-0868 (Japan)


As terahertz frequency devices, 100 Å scale ideal static induction transistor (ISIT) was fabricated with GaAs molecular layer epitaxy (MLE). The ISIT is estimated as electron transit time of 2⋅l0–14 s. In order to control the doping MLE at a sidewall in the fabrication process, the doping characteristics on each crystallographic orientation surfaces of GaAs substrate have been studied. In addition, the lateral growth rate on nanometre height step has been estimated by using table method. MLE of Si and SiO2 layers were also tried with investi- gating the surface reaction by using in situ mass spectroscopy. For Si growth, temperature modulation (TM) method was performed using Si2H6 as source gas. SiO2 thin layer was successfully deposited in Si MLE sys- tem by simultaneous supply of Si2H6 and active oxygen from helicon plasma source. Small temperature and pressure dependence of the deposition rate about 0.2–0.3 nm/min is useful for atomic and molecular level controlled process.