a:2:{s:4:"TEXT";s:146:"V. A. Zinov’ev1, A. V. Dvurechenskii1, P. A. Kuchinskaya1, V. A. Armbrister1, A. V. Mudryi2";s:4:"TYPE";s:4:"html";}
a:2:{s:4:"TEXT";s:306:"1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia 2Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, ul. P. Brovki 19, Minsk, 220072 Belarus";s:4:"TYPE";s:4:"html";}
Keywords: nanostructures, heteroepitaxy, quantum dots, spatial ordering
Subsection: FUNDAMENTAL PROBLEMS OF EPITAXY OF SEMICONDUCTOR NANOHETEROSTRUCTURES
A new approach to the creation of circularly ordered Ge nanoislands by epitaxy on the surface of a heterophase structure consisting of a Si(100) substrate with premade seeds in the form of SiGe nanodisks or SiGe nanorings is developed. It is shown that the spatial configuration of islands in the group is due to the nucleation of the islands in the area of local minima of the elastic energy density on the surface of a circular seed. On the basis of this approach, a number of multilayer structures with vertically aligned ring groups of quantum dots were grown. The elemental composition and luminescent properties of the ordered structures are studied.
T. V. Malin, V. G. Mansurov, A. M. Gilinskii, D. Yu. Protasov, A. S. Kozhukhov, A. P. Vasilenko, K. S. Zhuravlev
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: ammonia molecular beam epitaxy, two-dimensional electron gas, AlGaN/GaN, high electron mobility GaN transistors, AlN/Al2O3 substrate
Subsection: FUNDAMENTAL PROBLEMS OF EPITAXY OF SEMICONDUCTOR NANOHETEROSTRUCTURES
The possibility of using AlN/Al2O3 substrates to grow AlGaN/GaN hetero-epitaxial structures with a two-dimensional electron gas is studied. A method of calibrating the temperature of the substrates by measuring the thermal radiation spectrum is proposed. Differences between AlN/Al2O3 substrates that lead to differences in the electrophysical parameters of the grown structures are determined. AlN/Al2O3 substrates were used to grow AlGaN/GaN samples with a two-dimensional electron gas mobility in excess of 1300 cm2/(V · s) at an electron concentration in the channel higher than 1013 cm−2.
a:2:{s:4:"TEXT";s:227:"N. P. Stepina1, A. F. Zinov’eva1, A. S. Deryabin1, V. A. Zinov’ev1, V. A. Volodin1, A. A. Shklyaev1, A. V. Dvurechenskii1, S. V. Gaponenko2";s:4:"TYPE";s:4:"html";}
a:2:{s:4:"TEXT";s:280:"1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia 2Institute of Physics, National Academy of Sciences of Belarus, pr. Nezavisimosti 68, Minsk, 220072 Belarus";s:4:"TYPE";s:4:"html";}
Keywords: quantum dots, silicon, germanium, hydrogen
Subsection: FUNDAMENTAL PROBLEMS OF EPITAXY OF SEMICONDUCTOR NANOHETEROSTRUCTURES
The formation of Si quantum dots on Ge is studied. Fundamental differences were found between the nucleation and growth of quantum dots on substrates with different orientations, related to both the formation of a SiGe solid solution layer and the shape of quantum dots. The temperature interval of formation of Si nanocrystals on Ge (111) is determined. It is shown that a change in the epitaxy temperature from 480 to 400 ºC increases the silicon content in quantum dots from 58 to 75 %. The effect of surfactants (in particular, hydrogen) on the nucleation and growth of silicon nanoislands is analyzed, showing that the use of hydrogen as a surfactant leads to a decrease in the size of quantum dots and a substantial increase in their density. The observed effects are attributed to the suppression of surface diffusion of atoms in the presence of hydrogen.
A. V. Nenashev1,2, A. A. Koshkarev2, A. V. Dvurechenskii1,2 1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrenteva 13, Novosibirsk, 630090 Russia 2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia
Keywords: heterostructures, quantum wire, elastic deformation, anisotropy
Subsection: NUMERICAL MODELING OF NANOHETEROSTRUCTURE GROWTH, STRAIN FIELDS, AND ENERGY SPECTRUM
We consider the two-dimensional distribution of elastic strain in semiconductor heterostructures — quantum wires characterized by anisotropy of the elastic properties. The deformation is caused by the mismatch in lattice parameters between the material of the quantum wire and its environment (matrix).Such deformations affect the position of the energy bands, so that they should be taken into account in the calculation of the electronic states. It is shown that the strain distribution in an anisotropic medium is a linear combination of two distributions relating to transversely stretched modifications of the original quantum wire.
a:2:{s:4:"TEXT";s:147:"V. P. Zhukov1, M. P. Fedoruk1,2, A. F. Zinov’eva3, A. V. Nenashev4,5, A. V. Dvurechenskii4,5";s:4:"TYPE";s:4:"html";}
a:2:{s:4:"TEXT";s:654:"1Institute of Computational Technologies, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 6, Novosibirsk, 630090 Russia 2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia 3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia 4Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, ul. Pirogova 2, Novosibirsk, 630090 Russia 5Novosibirsk State University, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"html";}
Keywords: energy spectrum, quantum dots, heterojunction, silicon, germanium, wave function
Subsection: NUMERICAL MODELING OF NANOHETEROSTRUCTURE GROWTH, STRAIN FIELDS, AND ENERGY SPECTRUM
The problem of the applicability of the six-band kp -model to heterostructures with sharp boundaries is studied by calculating the energy spectrum of holes in the Ge/Si system with quantum dots. The boundary conditions which satisfy the conditions of particle flux conservation and the wave function continuity on the heterojunction are formulated at the level of differential equations and are characterized by a single parameter µ, which depends on the heterojunction properties. It is shown that a certain choice of µ leads to nonphysical interface states that fill the entire band gap. Conditions (range of µ) for the absence of such nonphysical states are determined by considering the simplest cases – a single heterojunction and a quantum well.
a:2:{s:4:"TEXT";s:173:"S. A. Rudin1, V. A. Zinov’ev1, A. V. Nenashev1,2, A. Yu. Polyakov1, Zh. V. Smagina1, A. V. Dvurechenskii1,2";s:4:"TYPE";s:4:"html";}
a:2:{s:4:"TEXT";s:246:"1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia 2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"html";}
Keywords: silicon, germanium, nanostructures, heteroepitaxy, Monte Carlo simulation
Subsection: NUMERICAL MODELING OF NANOHETEROSTRUCTURE GROWTH, STRAIN FIELDS, AND ENERGY SPECTRUM
A new method of incorporating the elastic strain into the atomistic simulation of heteroepitaxial growth is proposed. The idea of this method is to include random displacements (thermal oscillations) of atoms within the lattice site into the calculation algorithm in addition to elementary events that change the atomic configuration (deposition of new atoms and jumps of atoms from one crystal lattice site to another). It appears to be possible to assign probabilities of elementary events in order to guarantee minimization of the free energy of the unperturbed system. The simulation based on this method reproduces the main heteroepitaxial growth effects, such as the formation of threedimensional islands on the strained wetting layer (Stranski–Krastanov growth mode) and the vertical alignment of nanoislands in the course of growth of multilayer heterostructures.
A. I. Yakimov
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: heterostructures, quantum dots, photodetectors, silicon, germanium
Subsection: NANOHETEROSTRUCTURES FOR PHOTOELECTRIC CONVERTERS AND PHOTODETECTOR TUBES
This paper presents a review of studies of the photovoltaic characteristics of Ge/SiGe/Si heterostructures containing layers of Ge quantum dots in Si and SiGe matrices. In the experiments, the elemental composition of the SiGe films and its profile, the doping level and profiles, the position of the doped layers of Si and SiGe relative to the plane of quantum dots, and the number of layers of quantum dots were varied. The results of these studies were used to implement infrared photodetector elements functioning at normal light incidence in atmosphere transmission windows of 3 ÷ 5 and 8 ÷ 12 µm. The photodetectors have a high (up to 103) photoelectric gain, a high detection ability in the photovoltaic and photoconductive modes (up to 0.8 · 1011 cm · Hz1/2/W at a wavelength of about 4 m), and a current sensitivity of up to 1 mA/W, reach the background limited infrared performance already at a temperature of 110 K, and can be built in monolithic focal plane arrays on silicon substrates.
V. S. Varavin, S. A. Dvoretskii, D. G. Ikusov, N. N. Mikhailov, V. G. Remesnik, G. Yu. Sidorov, Yu. G. Sidorov, P. N. Sizikov, I. N. Uzhakov
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: cadmium–mercury–tellurium, molecular beam epitaxy, infrared photodetectors
Subsection: NANOHETEROSTRUCTURES FOR PHOTOELECTRIC CONVERTERS AND PHOTODETECTOR TUBES
A bilayer cadmium–mercury–tellurium (CMT) heterostructure was designed consisting of photosensitive layers of compositions xCdTe = 0.29–0.32 and xCdTe = 0.220–0.230, sensitive in the spectral ranges of 3–5 and 8–12 µm, a barrier layer between them, and wide-band variable-gap layers on the heterojunction and the surface grown on a GaAs substrate with ZnTe and CdTe buffer layers. The molecular beam epitaxial (MBE) growth of the heteroepitaxial structure (HES) was controlled by real time ellipsometry. After the growth, the composition distribution throughout the thickness was measured by reflection spectra with layer-by-layer chemical etching. There is good agreement between the results of composition measurements using ellipsometry and reflection spectra. P-type conductivity of bilayer MBE CMT HESs was obtained after thermal annealing at 220–240 ºC in an inert gas (helium) for 24 h. The concentration of holes in the photosensitive layers is (4–10) ·1015 cm−3 and (8–20) · 1015 cm−3 at 78 K.
a:2:{s:4:"TEXT";s:95:"A. V. Predein, Yu. G. Sidorov, I. V. Sabinina, V. V. Vasil’ev, G. Yu. Sidorov, I. V. Marchishin";s:4:"TYPE";s:4:"text";}
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: cadmium–mercury–tellur, photodetector arrays, current-voltage characteristics, hybrid assembly
Subsection: NANOHETEROSTRUCTURES FOR PHOTOELECTRIC CONVERTERS AND PHOTODETECTOR TUBES
This paper gives the parameters of 320 × 256 element long-wavelength infrared photodetectors fabricated by a new improved technology based on heteroepitaxial mercury–cadmium–tellur structures. In these photodetectors, the variation of the photodiode bias voltage over the area of the array is minimized; inefficient photodiode regions related to both hybridization and spike-shaped growth defects of epitaxial films are eliminated; the current-voltage characteristics of the diodes in the resulting photodetectors are homogeneous and are limited by the diffusion current component up to −400 mV. The dark current is 0.25–0.45 nA, and R0A = (0.6–3) · 102 Om · cm2. The voltage sensitivity, the threshold irradiance, and the average NETD at the maximum sensitivity are 11.8 · 108 V/W, 3.7 · 10−8 W/cm2, and 26.8 mK, respectively. The percentage of defective elements is 1.5%.
A. N. Akimov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Pashchin, V. N. Sherstyakova, V. N. Shumsky, V. S. Epov
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: THz radiation, metal–insulator transition, localized states in the bandgap, free electron laser, photoconductor prototype
Subsection: NANOHETEROSTRUCTURES FOR PHOTOELECTRIC CONVERTERS AND PHOTODETECTOR TUBES
Results of experimental studies of Pb1−xSnx Te:In films grown by molecular beam epitaxy with the tin concentration close to band inversion are presented. An optimal concentration of indium is determined, and films with x > 0.3 are obtained, where the so-called metal–insulator transition is observed. Photoconductor prototypes are fabricated, and the photocurrent induced by free electron laser radiation in the range of 140–205 µm is measured. A possibility of using photoconductors for recording the own radiation of a body heated to a temperature of 300 K in a passive mode, including systems of image registration in the terahertz spectral range, is estimated.
A. V. Gaisler, A. S. Jaroshevich, I. A. Derebezov, A. K. Kalagin, A. K. Bakarov, A. I. Toropov, D. V. Shcheglov, V. A. Gaisler, A. V. Latyshev, A. L. Aseev
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: semiconductor quantum dots, exciton, biexciton, fine structure, single photon emitter, emitters of entangled photon pairs
Subsection: FUNDAMENTAL PROBLEMS OF PHOTONIC DEVICES BASED ON SEMICONDUCTOR NANOHETEROSTRUCTURES
Ensembles of InAs quantum dots with a very low density (~106 cm−2) are grown by molecular beam epitaxy, which allows the spectral characteristics of emission of single quantum dots to be studied by the method of cryogenic microphotoluminescence. With increasing quantum dot size, the splitting of exciton states is demonstrated to increase steadily to ~102 µeV. In the exciton energy range of 1.3–1.4 eV, the magnitude of this splitting is comparable with the natural width of the exciton lines. This result is important for the development of emitters of entangled photon pairs based on InAs quantum dots.
A. G. Milekhin1,2, L. L. Sveshnikova1, T. A. Duda1, N. A. Yeryukov1, N. V. Surovtsev3, S. V. Adichtchev3, E. E. Rodyakina1, A. K. Gutakovskii1, A. V. Latyshev1, D. R. T. Zahnd4
a:2:{s:4:"TEXT";s:502:"1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia 2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia 3Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Koptyuga 1, Novosibirsk, 630090 Russia 4Semiconductor Physics, Chemnitz University of Technology, D-09107, Chemnitz, Germany";s:4:"TYPE";s:4:"html";}
Keywords: nanocrystals, nanowires, nanoclusters, phonons, localized surface plasmon, surface-enhanced Raman scattering, absorption
Subsection: FUNDAMENTAL PROBLEMS OF PHOTONIC DEVICES BASED ON SEMICONDUCTOR NANOHETEROSTRUCTURES
Surface-enhanced Raman scattering by optical and surface phonons in CdS, GaN, and CuS nanocrystals, and AlN nanowires is detected and studied. It is found that the presence of metal (Ag, Au, and Pt) nanoclusters noticeably modifies the Raman spectra of the nanostructures and results in a resonant increase in the intensity of optical phonon modes in CdS and CuS nanocrystals or in the emergence of surface modes in GaN nanocrystals and AlN nanowires. It is shown that the frequencies of the surface optical phonon modes of the examined nanostructures are in good agreement with the theoretical values calculated within the framework of the dielectric continuum model.
T. S. Shamirzaev1, D. Dunker2, J. Debus2, D. R. Yakovlev2,3, K. S. Zhuravlev1, M. Bayer3
a:2:{s:4:"TEXT";s:398:"1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia 2Experimentelle Physik 2, Technische Universit¨at Dortmund, Dortmund, 44221 Germany 3Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021 Russia";s:4:"TYPE";s:4:"html";}
Keywords: quantum dots, exciton, spin relaxation
Subsection: SEMICONDUCTOR NANOHETEROSTRUCTURES FOR SPINTRONICS
The time of spin relaxation of excitons in (In,Al)As/AlAs quantum dots with an indirect bandgap and type-I band alignment is determined by measuring the dynamics of photoluminescence circular polarization induced by a magnetic field B. The spin relaxation time τS increases with decreasing magnetic field in proportion to B−5; its value is ~40 µs in a magnetic field of 6 T at a temperature of 1.8 K. As the temperature T increases in a magnetic field of 7T, the value of τS decreases as T−1.1. The character of the dependences of τS on the magnetic field and temperature evidences that spin relaxation of excitons is provided by a process with participation of one acoustic phonon.
a:2:{s:4:"TEXT";s:349:"Yu. D. Ivanov1, T. O. Pleshakova1, A. F. Kozlov1, K. A. Mal’sagova1, N. V. Krokhin1, A. L. Kaisheva1, I. D. Shumov1, V. P. Popov2, O. V. Naumova2, B. I. Fomin2, D. A. Nasimov2, A. L. Aseev2, A. I. Archakov1";s:4:"TYPE";s:4:"html";}
a:2:{s:4:"TEXT";s:299:"1Orekhovich Institute of Biomedical Chemistry, Russian Academy of Medical Sciences, ul. Pogodinskaya 10, Moscow, 119121 Russia 2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"html";}
Keywords: aptamer, biosensor, D-NFATc1, silicon-on-insulator, nanowires
Subsection: FUNDAMENTAL PROBLEMS OF BIOSENSORICS ON THE BASIS OF NANOHETEROSTRUCTURES
Nanowire (NW) detection is one of the fast and highly sensitive methods. An NW biosensor based on silicon-on-insulator (SOI) structures are used in the reported study for real-time label-free biospecific detection of the NFATc1 (D-NFATc1) cancer marker. For this purpose, the SOI NWs are functionalized with NFATc1 aptamers used as macromolecular probes. It is demonstrated that such a biosensor can ensure a detection limits up to 10−15 M, which is comparable with the sensitivity ensured by an NW biosensor with immobilized antibodies used as macromolecular probes. The results of this study demonstrate that such approaches to the development of sensor elements for highly sensitive diagnostics of diseases are really promising.
N. B. LISOVSKAYA, T. L. SMOLINA, E. A. TROSHCHININA
Saint-Petersburg
Keywords: career readiness, career counseling, career centers, career support model, employment model, model of career planning, networking model, interactive technologies, «mock interview», «history of success»
In the article,the foreign experience of forming the career readiness of the graduates is analyzed. The authors describe the models of the career support in the foreign system of professional education. In the article, the history of development of the career support and the main stages of its development are considered, three models of the career support are described in detail: the employment model, the model of career planning, and the network model. Also, the authors carry out an analysis of the career centers of the universities in the USA, Europe and Australia; and there are considered several technologies applied in the foreign system of forming the career readiness.
R. F. ZHAKSYLYKOV
Astana, Republic of Kazakhstan
Keywords: vocational training of officers, the system approach, the activity approach, pedagogical modeling
In the article, the problems of vocational training of the officers of the Internal Troops under the program of post-graduate training are considered. There is proposed a structurally functional model of the pedagogical system of «Training the officers of high qualification» for its introduction into the educational process of the National Defense University of the Republic of Kazakhstan.
B. I. KIM
Kostanai, Republic Kazakhstan
Keywords: patterns of philosophy, ontologyandgnoseology, methodologyof didactics, innovativetechnology, quality of teaching, quality of education
The premises of this articleareuniversal,common and particularpatterns of philosophyexpressedin the ontologyandgnoseology of the educational process of students.The methodologyof education didactics is considered as a creative work of the due, necessary, and essential in educationbutnotthe process of its achievement.The quality of education is achieved with the innovativetechnology providing high quality of teaching.
A. S. FOMIN, D. A. FOMIN
Novosibirsk
Keywords: philosophy of dance, system research, the multifunctional theory of dance, dance in innovative education, pedagogical technologies of dance
The article is devoted to philosophical understanding of dance in the professional education. The functions of dance are studied as pedagogical technologies of innovative education. The prospect of introduction of dance as a kind of creative activity of the person is conformable to the ideas of various experts.The authors give an account of the results of scientific investigation of the poly-functional theory of dance. The genesis and social functions of dance are revealed in a broad historical range. The innovative aspects of dance define the perspectives of creating pedagogical technologies of dance in the system of general and corrective education in the twentyfirst century.
M. F. KUZNETSOVA
Krasnoyarsk
Keywords: national system of education, culture, civilization, philosophy of education, educational institutions, university, model of the world, society
The article presents a brief analysis of the national educational institutions from the position of philosophy of education. The article deals with some traditional and modern approaches to educationin Great Britain, Germany, France, USA, and Japan. The author demonstrates the relationship between the society, the model of the world and the model of higher education. The topicality of the socio-philosophical and philosophical-methodological comprehension of reforming higher education and its institutions is substantiated.
Informative interests, requirements, valuable orientations, communicative functions directed on the formation of the personality of a travel manager are considered in the article.
I. V. IVANOV, M. V. ARTYUKHOV
Novosibirsk, Novokuznetsk
Keywords: humanity, somatic education, health care, modernization, upbringing, society, culture, body, intellect, phychics, harmony
The modern requirements to education make topical the tasks of modernizing the continuous education system of the person in the process of ontogenesis and acutely put the question of preserving and supporting health of all the participants of the educational process. One of the major factors promoting the active selfdeveloping of the person is the presence of a healthy ‘bodily’ state of the person and the inseparable interconnection between body and spirit. The main factor of being well educated is the knowledge of one’s own physicality, the ability to influence it and to manage the somatic psychological technologies of physical condition regulation, as well as the knowledge of reconstructive and prophylactic technologies in the field of health preservation.
The article deals with the results of introduction of the reflexive educational methods into the curriculum of the additional vocational training at the Novosibirsk State Agrarian University. The methods are aimed at the teachers and educators who donot have basic special pedagogical education.
V. I. PARSHIKOV, S. I. CHERNYKH
Novosibirsk
Keywords: globalization, education, culture, multiculturalism, transformation of education, multi-paradigm character of education
In the article the questions are considered connected with the influence of globalism and multiculturalism on the development of education. In the center of attention of the authors are such problems as definition of the concept of globalization, development of interdisciplinary research in this area, interrelation of culture of multidimensional world and education. A special attention is given to the problem of the multi-paradigm character of education in modern conditions as a methodological basis of studying those transformations to which the world educational space is exposed today.
Globalization is an objective natural process based on the fourth wave of scientific and technological revolution in which the contradiction between the public nature of manufacturing and the domination of the private form of appropriation has become extreme. The planetary society has arrived near a bifurcation point when its self-destruction and transition to a higher level of self-organization are equally probable. The author, applying the method of paradigmal analysis developed by him, reveals the potential possibilities of education systems to be a factor of humanization and democratization of the processes of globalization. Nowadays, the education transition from the traditional paradigm to a new continuous-integrated paradigm is an objective necessity.
T. A. ARTASHKINA
Vladivostok
Keywords: transformation of the object of pedagogics, transformation of the subject of pedagogics, phenomenon of education, meanings of education, general crisis of education, replacement of values, reception of the Western philosophical culture, integration of scientific knowledge, cluster factor, integration of philosophical knowledge with non-philosophical one, explanation as a function of science, limitations of humanitarian knowledge
The focus of the present paper is transformation of the object field in contemporary pedagogics. Currently, the following main channels, through which such transformation is realized, are actively functioning: the phenomenon of education itself; the social and cultural factors determining a general crisis in education; integration processes in contemporary research studies; integration of philosophic and non-philosophic knowledge; interconnection of humanities and sciences. The author analyses the necessity and possibility of transformation of the object field in pedagogics, highlights the arising issues, and determines the risks of such transformation.
The author analyzes the system foundations of the quality of national higher education in the globalizing world. The article shows that there are external and internal criteria of the quality of higher education, formulates the fundamental postulates of the quality of higher education based on a systematic approach in shaping the quality of domestic higher education, discloses the negative consequences of the impact of globalization on the quality of national higher education. Thus, the following statement is substantiated: it makes no sense to consider the quality of higher education in the society of knowledge without taking into account political and ideological orientations.
The interconnection between philosophy and the theory of education is necessary for both philosophy and the theory and practice of education. The functions of philosophy in the analysis of an education system are manifested in the development of general principles and ways of scientific knowledge; they allow understanding the specificity of formation of the theory of education. What are the topical aspects of interrelation between the theory of education and philosophy? In the article the functions of philosophy for the all-round analysis of global questions of the Russian education are considered.
I. V. BRYLINA, A. YU. KARPOVA, D. A. KARPOV
Tomsk
Keywords: power of intellectuals, accumulation of intellectuals, technocracy, engineering elite, social engineer, problem-oriented training, psychological support
There are studied the problems of the university educational practiceand reproduction of the elite selection in modern university on the basis of comparative analysis of higher education systems using the example of the Karlsruhe Institute of Technology (KIT) and the elite technical education at the National Research Tomsk Polytechnic University (TPU).
The authors analyze upbringing as a process of reproduction of human species in its unity with education. They show the necessity of strengtheningthe cultureforming role of education and upbringing in modern conditions. The question ofpolycultural formation of personality is discussed. In addition, the authors consider various ways and forms of upbringing activity. The methodology of it is examined by philosophy and the latter is shown as the methodological basis of person’s spiritual activity. Thus, the authors substantiate the content and essence of upbringing process in its close connection with education, this connection being a paradigm of modern education.
The author tries to find adequate answers to the challenges of globalization to the Russian education system. The role of motivation of students to mastera profession as a factor of development of modern education is analyzed and substantiated. Such formulation of the problem allowsconsideringmotivation as a core quality of innovative activity of students oriented to mastering a profession,in the process of organization of domestic educational space in the conditions of globalization.
The paper analyzes the challenges and benefits of part-time and full-time professional training of students, the expediency of modernization of distance learning rather than abandoning it, as it has an importantsocial function: to promoteaccessto higher educationto the populationwith average incomes, those livingin remote provinces. The introduction of educational information technology, high-quality education in the practice of distance learning will facilitate the optimal combination of high-quality education with it sefficiency and availability.
In this paper we investigate the precision of estimate of the expectation of solutions to stochastic differential equations with a random structure. The dependence of the precision of estimate on the size of the integration step of the generalized Euler method and on the volume of the simulated trajectories is shown. A strong loss of the precision of estimate at deterministic or random times of changing the SDE structure is shown on an example of a simple equation. This requires the use of supercomputers for the statistical modeling. The results of the numerical experiments carried out in the Siberian SuperСomputer Center are presented.
The construction of the Newton-Cotes formulas is based on approximating an integrand by the Lagrange polynomial. The error of such quadrature formulas can be serious for a function with a boundary-layer component. In this paper, an analogue to the Newton-Cotes rule with four nodes is constructed. The construction is based on using non-polynomial interpolation that is accurate for a boundary layer component. Estimates of the accuracy of the quadrature rule, uniform on gradients of the boundary layer component, are obtained. Numerical experiments have been performed.
The inverse problem is solved by an optimization method using the Laguerre functions. Numerical simulations are carried out for the one-dimensional Maxwell's equations in the wave and diffusion approximations. Spatial distributions of permittivity and conductivity of the medium are determined from a known solution at a certain point. The Laguerre harmonics function is minimized. The minimization is performed by the conjugate gradient method. Results of determining permittivity and conductivity are presented. The influence of shape and spectrum of a source of electromagnetic waves on the accuracy of solution of the inverse problem is investigated. The accuracies of the solutions with a broadband and a harmonic sources of electromagnetic waves are compared.
In the computational experiment, the influence of heat exchange through top and bottom of the gas-bearing reservoir on the dynamics of temperature and pressure fields in the process of real gas production from a single well is investigated. The experiment was carried out with a modified mathematical model of non-isothermal gas filtration, obtained from the energy and mass conservation laws and the Darcy law. The physical and caloric equations of state together with the Newton-Rihman law of heat exchange of a gas reservoir with surrounding enclosing rocks are used as closing relations. It is shown that the influence of the heat exchange with environment on the temperature field of a gas-bearing reservoir is localized in a narrow zone near its top and bottom, though the size of this zone increases with time.
The A(α)-stable numerical methods (ANM) for the number of steps k ≤ 7 for stiff initial value problems (IVPs) in ordinary differential equations (ODEs) are proposed. The discrete schemes proposed from their equivalent continuous schemes are obtained. The scaled time variable t in a continuous method, which determines the discrete coefficients of the discrete method is chosen in such a way as to ensure that the discrete scheme attains a high order and A(α)-stability. We select the value of α for which the schemes proposed are absolutely stable. The new algorithms are found to have a comparable accuracy with that of the backward differentiation formula (BDF) discussed in [12] which implements the Ode15s in the Matlab suite.
Spline approximation with a reproducing kernel of a semi-Hilbert space is studied. Conditions are formulated that uniquely identify the natural Hilbert space by a reproducing kernel, a trend of spline, and the approximation domain. The construction of spline with external drift is proposed. It allows one to approximate functions having areas of big gradients or first-kind breaks. The conditional positive definiteness of some known radial basis functions is proved.
K.A. Rybakov
Keywords: branching processes, conditional density, the Duncan-Mortensen-Zakai equation, Monte Carlo method, optimal filtering problem, stochastic system
An algorithm for solving the optimal nonlinear filtering problem by statistical modeling is proposed. It is based on reducing the filtration problem to the analysis of stochastic systems with terminating and branching paths, using a structure similarity of the Duncan-Mortensen—Zakai equations and the generalized Fokker-Planck-Kolmogorov equation. The solution of such problem of analysis can be approximately found by using numerical methods for solving stochastic differential equations and methods for modeling inhomogeneous Poisson flows.
The probability of the precession of a pendulum with the Cardano suspension in conditions of an oscillation point of suspension based on the mathematical proof is investigated.
