Interference Photolithography with the Use of Resists on the Basis of Chalcogenide Glassy Semiconductors
V. A. Dan'ko, I. Z. Indutnyi, V. I. Min'ko, P. E. Shepelyavyi
Keywords: interference lithography, inorganic chalcogenide photoresist, immersion, etching, periodic structure
Pages: 103-112
Abstract
The use of chalcogenide glassy semiconductors as an inorganic vacuum photoresist to obtain periodic relief structures on substrates of various compositions is investigated. It is shown that a chalcogenide resist can be successfully used in combination with interference lithography (including the immersion one) to form one- and two-dimensional submicron-size periodic structures with a spatial frequency of 300 to 8000 mm−1. Technological processes of obtaining relief structures and lithographic masks with submicron sizes of elements on semiconductor, dielectric and metal substrates are developed, and their possible applications are described.
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