Mobility of minority carriers in doped p-MCT films grown by molecular beam epitaxy
D. Yu. Protasov, S. A. Dvoretsky, V. Ya. Kostyuchenko*, V. S. Krylov*, N. N. Mikhailov and R. N. Smirnov
Institute of Semiconductor Physics, SB RAS, Novosibirs
E-mail: protasov@thermo.isp.nsc.ru
*Siberian State Geodesic Academy, Novosibirsk
Pages: 74-79
Abstract
Temperature dependences of the Hall coefficient and magnetoresistance in heteroepitaxial structures of p-CdxHgx-1Te (MCT) of XCdTe = 0.22
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