Power Au-TiBx-n-n+-GaAs Schottky Barrier Diodes
Nikolay S. Boltovets1, Raisa V. Konakova2, Victor V. Milenin2, Evgeniy F. Venger2 and Dmitriy I. Voitsikhovskiy2
1GosNII "Orion", Ul. Eugene Pottier 8a, Kiev 03057 (Ukraine)
2Institute of Semiconductor Physics, Pr. Nauki 45, Kiev 03028 (Ukraine)
e-mail: konakova@isp.kiev.ua
Abstract
A technology is developed for obtaining power Au-TiBx-n-n+-GaAs Schottky diodes of planar and mesa structures and with integrated heat sink. The effect of thermal annealing (at T = 500
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