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Chemistry for Sustainable Development

2001 year, number 7

Physical and Chemical Transformations in Thin Films of Silicon Carbonitride during Thermal Annealing

Nadezhda I. Fainer, Yuri M. Rumyantsev and Marina L. Kosinova
Institute of Inorganic Chemistry,
Siberian Branch of the Russian Academy of Sciences,
Pr. Akademika Lavrentyeva 3, Novosibirsk 630090 (Russia)


Physicochemical transformations that take place in thin nanocrystalline layers of silicon carbonitride as a result of thermal annealing in vacuum at a temperature of 1173 K are investigated. IR, Raman spectroscopy, XPES, ellipsometry and X-ray analysis are applied to study these physicochemical transformations. It is stated that high-temperature annealing of the silicon carbonitride films helps decreasing the amorphous constituent of the film, increasing the density and size of nanocrystals incorporated in the film.