Silicon Carbonitride Films as a Promising Material Synthesized from New Sources
Tamara P. Smirnova1, Aram M. Badalyan1, Lyubov V. Yakovkina1, Natalia H. Sysoeva1, Igor P. Asanov1, Vasily V. Kaichev2, Valery I. Bukhtiarov2, Alexander N. Shmakov
1Institute of Inorganic Chemistry,
Siberian Branch of the Russian Academy of Sciences,
Pr. Akademika Lavrentyeva 3, Novosibirsk 630090 (Russia)
2G. K. Boreskov Institute of Catalysis, Siberian Branch of the Russian Academy of Sciences,
Pr. Akademika Lavrentyeva 5, Novosibirsk 630090 (Russia)
3A. A. Favorsky Institute of Chemistry,
Siberian Branch of the Russian Academy of Sciences,
Ul. Favorskogo 1, Irkutsk 664033 (Russia),
E-mail: smirn@che.nsk.su
Abstract
Silicon carbonitride films were synthesized by means of the chemical vapour deposition (CVD) process in the scheme with remote plasma. Initial compounds were the silyl derivatives of 1,1-dimethyl hydrazine: dimethyl(2,2-dimethylhydrazino)-silane and dimethyl-bis-(2,2-dimethylhydrazino)silane. The molecules of the monomers contain the bonds Si-N, Si-C and C-N which are necessary for the formation of silicon carbonitride.
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