Mechanical Stability of Power Device Materials High Temperature Hardness of SiC, AlN and GaN
Ichiro YONENAGA
Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan) E-mail: yonenaga@imr.edu
Abstract
The hardness of bulk single crystal 6H-SiC, GaN and AlN was measured by the Vickers indentation method under an applied load of 0.5-5 N in the temperature range 20-1400
