PRODUCTION OF ANALOG-DIGITAL SILICON MULTIPLEXERS OF SIGNALS OF INFRARED PHOTORECEIVERS
M. A. Dem'yanenko, A. I. Kozlov, I. V. Marchishin, V. N. Ovsyuk
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academdy of Sciences, prosp. Lavrent'eva, 13, Novosibirsk 630090
Keywords: кремниевый мультиплексор, интегральная схема считывания фотосигналов, инфракрасный фотоприёмник, фотодиод на основе соединения кадмий-ртуть-теллур, фотодетектор на основе многослойных структур с квантовыми ямами, silicon multiplexer, integrated circuit for photosignal reading, infrared photodetector, photodiode based on the cadmium-mercury-tellurium compound, photodetector based on multilayer structures with quantum wells
Abstract
This paper describes the production of analog-digital integral reading circuits for photosignals of hybrid multielement infrared photoreceivers (silicon multiplexers). This work contains the estimation of noise equivalent temperatures of infrared photoreceivers based on multiplexers with frame-by-frame and row-by-row acquisition of signals of photosensitive elements of the spectral ranges 8 to 14 and 3 to 5 m. This paper also presents the development of silicon multiplexers for infrared photoreceivers designed with the use of photodiodes based on the cadmium-mercury-tellurium compound and photodetectors on multilayer structures with quantum wells. The designed multiplexers ensure the use of matrix and ruled photoreceiving crystals, include those with increased dark currents, in order to produce infrared photoreceivers whose temperature resolution corresponds to worldwide standards.
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