METHOD OF REDUCING THE GAP BETWEEN CHIPS IN MOSAIC PHOTODETECTOR MODULES
A. R. Novoselov
Design and Technological Institute of Applied Microelectronics, ul. Nikolaeva 8, Novosibirsk, 630090 Russia
Keywords: мозаичные фотоприёмники, лазерное скрайбирование, фотопрёмники на гетероэпитаксиальных плёнках КРТ, фоточувствительные болометрические матрицы, кремниевые микросхемы, mosaic photodetectors, laser scribing, photodetectors based on heteroepitaxial mercurycadmium-telluride (MCT) films, photosensitive bolometric matrices, silicon microchips
Abstract
A method is proposed to shape the edges of chips in order to reduce the gap between chips in infrared-sensitive mosaic photodetectors modules. The method involves laser scribing of asymmetric grooves, splitting-off of the edge of the chip surface going under the chip, and the subsequent vertical alignment of the edges using laser radiation. The width of the gap between chips is 1-3 μm.
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