EXPERIMENTAL METHOD OF FABRICATION OF A MATCHED METAL-DIELECTRIC STRUCTURE FOR A SENSOR BASED ON THE EFFECT OF FRUSTRATED TOTAL INTERNAL REFLECTION
a:2:{s:4:"TYPE";s:4:"TEXT";s:4:"TEXT";s:30:"V. S. Terent’ev, V. A. Simonov";}
Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Koptyuga 1, Novosibirsk, 630090 Russia
Keywords: нарушение полного внутреннего отражения, тонкая металлическая плёнка, металл-диэлектрическая интерференционная структура, сенсорика коэффициента преломления, frustrated total internal reflection, thin metal film, metal-dielectric interference structure, refractive index sensorics
Subsection: PHYSICAL AND TECHNICAL PRINCIPLES OF MICRO- AND OPTOELECTRONICS
Abstract
An experimental method of fabrication of a sensor based on a metal-dielectric structure (Al + ZnS) and optimization of its characteristics is described. The coefficient of light reflection ( p -polarization) from the aluminum layer is studied as a function of the layer thickness for different angles of incidence at the wavelength of 532 nm. Based on calculations, which are qualitatively consistent with experimental results, a structure consisting of matched layers of aluminum and zinc sulfide is fabricated; this structure has a higher angular resolution than the aluminum film with no dielectric coating. The detection limit of angular measurements by the sensor based on this structure is estimated as 2.6 · 10
-5 RIU (refraction index units).
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