ELLIPSOMETRIC STUDY ON THE FORMATION OF NANOCOMPOSITES BY ANNEALING SIOX FILMS IN OXYGEN-CONTAINING MEDIA
N. V. Sopinskii1, A. V. Russu2
1Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45 Kyiv, 03028 Ukraine
2National University of “Kyiv-Mohyla Academy,”, ul. Grigoriya Skovorody 2, Kyiv, 04655 Ukraine
Keywords: кремниевые наночастицы, эллипсометрия, оптическая модель, разделение фаз, окисление, silicon nanoparticles, ellipsometry, optical model, phase separation, oxidation
Abstract
The multiangle ellipsometry method was used to study phase-structural transformations occurring during thermal annealing of vacuum-deposited SiOx films in air. The analysis of the experimental results carried out with a set of optical models that take into account nonuniformity and anisotropy made it possible to obtain data about the impact of the competitive processes of phase decomposition and oxidation of SiOx films into macro- and microstructures of systems formed in the annealing temperature range from 650 to 1000 °C.
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