Dynamic and Static Characteristics of MOS Thyristors Irradiated with Electrons
Eugenie V. Chernyavsky1, VladiMIr P. Popov1, Yuri S. Pakhmutov2, Yuri S. Krasnikov1 and Leonid N. Safronov1
1Institute of Semiconductor Physics,
Siberian Branch of the Russian Academy of Sciences,
Pr. Akademika Lavrentyeva 13, Novosibirsk 630090 (Russia)
2Angstrem Co., Yuzhnaya promzona, Zelenograd, Moscow 103460 (Russia)
E-mail: evgen@isp.nsc.ru
Abstract
The results of development and manufacture of MOS controlled thyristors (MCT) are presented. Static and dynamic characteristics are studied. The effect of the irradiation with electrons on the static and dynamic characteristics is investigated. It is found that the irradiation with electrons provides a substantial decrease of the MCT turn-off time. Also an increase of the density of controllable current was observed.
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