THERMAL, DIELECTRIC, AND SURFACE ANALYSIS OF NaDP DOPED GLYCINE PHOSPHITE SINGLE CRYSTALS
S. Supriya, F. Fernández-Martinez
Mechanical Engineering, Chemistry and Industrial Design Department, E.T.S.I.D.I., Technical University of Madrid, Madrid, Spain sciencepriya@gmail.com
Ключевые слова: atomic force microscopy, characterization, surfaces, growth from solutions, single crystal growth, dielectric materials
Страницы: 1718-1721
Аннотация
Transparent, unidirectional single crystals of sodium dihydrogen phosphate-doped glycine phosphite (NaDP-GPI) are grown by the Sankaranarayanan-Ramasamy method. The good quality crystal is obtained under controlled thermal conditions. The functional groups and melting temperature of NaDP-GPI single crystals are analysed. The phase transition temperature of NaDP-GPI is calculated from the dielectric studies. The mound-like patterns are observed on the surface of the crystal. The growth process under the controlled thermal condition was observed by optical studies. The obtained results are discussed in detail.
Наш сайт использует куки. Продолжая им пользоваться, вы соглашаетесь на обработку персональных данных в соответствии с политикой конфиденциальности. Подробнее