Measurement of Silicon Melt Temperature during Electron Beam Refining
V. G. Shchukin, V. O. Konstantinov
Institute of Thermophysics named after S.S. Kutateladze Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: pyrometric measurements, melt temperature measurements, silicon refining, electron beam plasma
Abstract
A method for measuring the temperature of the silicon melt during plasma-chemical electron-beam refining is proposed. The method is based on measuring the radiation intensity from the melt in the infrared range and comparing it with the temperature. It is established that the refined silicon temperature can be varied from 1500 K to 2600 K by changing the refining conditions, in particular, the electron beam current.
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