High-Temperature Annealing of Thin Silicon Suboxide Films Produced by the Method of Gas-Jet Chemical Deposition with Activation by Electron-Beam Plasma
E. A. Baranov1, A. O. Zamchii1,2, N. A. Lunev1,2, I. E. Merkulova1, V. A. Volodin3,4, M. R. Sharafutdinov5, A. A. Shapovalova6
1Kutateladze Institute of Thermal Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
2Novosibirsk State University
3Novosibirsk State University, Novosibirsk, 630090, Russia
4Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
5Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
6Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
Keywords: nanocrystalline silicon, nonstoichiometric silicon oxide, thin film synthesis
Abstract
Thin films of amorphous nonstoichiometric silicon oxide (a-SiOx:H, 0 < x < 2) have been synthesized by gas-jet deposition with activation by an electron-beam plasma. The stoichiometric coefficient of the a-SiOx:H films was varied in the range 0.47-1.63 depending on the parameter R determined by the mixture flow rate Ar-SiH4. High-temperature (at a temperature of 950°C for 2 h) annealing of a-SiOx:H thin films led to the formation of 8.3-12.3 nm crystalline silicon nanoparticles. It is shown that with an increase in the parameter R, the degree of crystallinity of the annealed films increases up to 66%. It has been suggested that the position of the peak of nanocrystalline silicon in the Raman spectra is affected by mechanical stresses. As a result of a quantitative assessment of such a stress, the values of 1.0-1.7 GPa are obtained.
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