LIGHT EMISSION BY MONOLAYERS OF MOLYBDENUM DISULFIDE
A.V. Marchenko1,2, N. N. Kurus1, A.A. Kolosvetov3, A. G. Milekhin1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibrsk State University, Novosibirsk, Russia
3Moscow Institute of Physics and Technology, Moscow Region, Russia
Keywords: Molybdenum disulfide MoS, Raman scattering (RS), photoluminescence (PL), atomic force microscopy (AFM), amplification of the optical phonon mode intensity of silicon
Abstract
A comprehensive study of monolayers of molybdenum disulfide MoS2, formed on a silicon substrate using Raman scattering (RS), photoluminescence (PL), was carried out in comparison with the data of atomic force microscopy (AFM). Maps of the distribution of the Raman scattering intensity by optical phonons and exciton PL from monolayer MoS2 films were constructed. The dependences of the frequencies of the fundamental vibrational modes of MoS2 (A1g and E2g) on the thickness of monolayer coatings were obtained. An enhancement of the Raman mode of the optical phonon of silicon by a bilayer of molybdenum disulfide was found. A hypothesis on the interference enhancement of Raman scattering of light by phonon modes of silicon is proposed.
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