ELLIPSOMETRIC IN SITU METHODS OF TEMPERATURE CONTROL IN THE TECHNOLOGY OF GROWING MBE MCT LAYERS
V.A. Shvets1,2, D.V. Marin1, I.A. Azarov1, M.V. Yakushev1, S.V. Rykhlitskii1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Keywords: molecular beam epitaxy, mercury cadmium telluride, growth temperature, ellipsometry, process control
Abstract
The problem of in situ temperature control during the growth of epitaxial layers of CdHgTe by molecular beam epitaxy is considered. Various approaches to solving the problem using spectroscopic ellipsometry are proposed. They are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer and the growing CdHgTe layer. The results of experimental testing of these methods are presented, which show that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth, it is possible to determine the change not only in temperature, but also in the composition of the growing layer from the ellipsometric spectra.
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