OPTICAL SHUTTERS BASED ON SEMICONDUCTOR QUANTUM WELLS A3B5
N.N. Rubtsova, A.A. Kovalyov, D.V. Ledovskikh, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin
Rzhanov Institute of Semiconductor Physics Siberian Branch RAS, Novosibirsk, Russia
Keywords: quantum wells, excitonic absorption in quantum wells, electron-hole recombination, charge carrier trunneling between quantum wells
Abstract
The action of quantum wells design and specific features of their manufacturing technology on the performance and maximum modulation depth of optical shutters based on quantum wells A3B5 predestinated for mode locking of NIR lasers is analyzed.
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