MECHANISMS FOR REMOVING OXIDES FROM THE INP SURFACE AT ANNEALING IN AN ARSENIC FLUX
D. V. Dmitriev, D. A. Kolosovsky, A. I. Toropov, K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: InP, As, annealing, oxide, RHEED
Abstract
The mechanisms of surface transformation during annealing of epi-ready InP (001) substrates in a flux of arsenic molecules have been studied in situ by reflection high-energy electron diffraction. The effect of the annealing temperature and the arsenic flux on the processes of removing oxides from the InP surface, which occur as a result of thermal decomposition and chemical interaction of oxides with arsenic, has been studied.
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