Rapid indication of the influenza virus using a biosensor based on a silicon nanowire field-effect transistor
A.A. Cheremiskina1, O.V. Naumova2, A.G. Durymanov1, V.M. Generalov1, A.S. Safatov1, G.A. Buryak1
1State Research Center of Virology and Biotechnology "Vector", Novosibirsk region, Koltsovo, Russia
2Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, Novosibirsk, Russia
Keywords: biosensor, nanowire field-effect transistor, indication, virus
Abstract
The results of the indication of the A (H3N2) influenza virus, strain A/HongKong/4801/2014 using a biosensor based on a silicon nanowire field-effect transistor are presented. In the experiment, specific and non-specific antibodies to this virus contained in blood serum were used. It is found that the influenza virus is electrically neutral at the “nanowire surface-suspension” phase interface; “antigen-antibody” mixtures BPL-H1 and B-BPL have an electrically negative charge at this interface.
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