FIELD EFFECT AND SPIN VALVE EFFECT IN A PbSnTe CRYSTALLINE TOPOLOGICAL INSULATOR
A.S. Tarasov1, V.A. Golyashov1, D.V. Ishchenko1, I.O. Akhundov1, A.E. Klimov1,2, V.S. Epov1, A.K. Kaveev3, S.P. Suprun1, V.N. Sherstyakova1, O.E. Tereshchenko1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Ioffe Institute, Saint-Petersburg, Russia
Keywords: твёрдый раствор PbSnTe:In, эффект поля, спин-вентильный эффект, PbSnTe solid solution, field effect, spin valve effect
Abstract
The characteristics of MIS structures based on insulating PbSnTe:In films grown by molecular beam epitaxy (MBE) with compositions near the band inversion are studied. It is shown that a number of their features can be induced by a ferroelectric phase transition with the Curie temperature in the range of 15-20 K. The injection and detection of spin-polarized electrons in PbSnTe:In are studied by using ferromagnetic contacts Co and Co40Fe40B20. A spin-valve effect is discovered by measuring the magnetoresistance in local geometry at a distance of more than 30 μm from ferromagnetic contacts. The presence of a surface spin-polarized state with a linear dispersion law is demonstrated by means of the photoemission with angular and spin resolution.
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