INVESTIGATING THE ELASTIC PROPERTIES OF SUSPENDED CONDUCTING GAAS/ALGAAS NANOSTRUCTURESBY MEANS OF ATOMIC FORCE MICROSCOPY
E. Yu. Zhdanov1,2, A. G. Pogosov1,2, D. A. Pokhabov1,2, M. V. Budantsev1, A. S. Kozhukhov1, A. K. Bakarov1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent’eva, 13 2Novosibirsk State University, 630090, Novosibirsk, Pirogova, 2
Keywords: атомно-силовая микроскопия, наноэлектромеханические системы, подвешенные наноструктуры, GaAs/AlGaAs, atomic power macroscopy, nanoelectromechanical systems, suspended nanostructures, GaAs/AlGaAs
Abstract
This paper demonstrates the applicability of atomic-power microscopy for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case where the stiffness under study significantly exceeds the cantilever stiffness of an atomic-power microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different structural points and theoretical values.
|