Silicon Film Deposition using a Gas-Jet Plasma-Chemical Method: Experiment and Gas-Dynamic Simulation
R. G. Sharafutdinov, P. A. Skovorodko, V. G. Shchukin, V. O. Konstantinov
Kutateladze Institute of Thermophysics, Novosibirsk, 630090, Russia
Keywords: свободная струя, реактор, моделирование, метод DSMC, тонкие пленки кремния, электронно-пучковая плазма, плазмохимическое осаждение, free jet, reactor, simulation, DSMC method, thin silicon films, electron-beam plasma, plasma-chemical deposition
Abstract
This paper presents results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasma-chemical method. A numerical model of a flow of gas mixtures, flowing out of an annular nozzle unit and flowing into a reactor, is developed, and it allows one to determine a film thickness distribution over the surface of substrates placed in the reactor and describes the experimental data obtained satisfactorily
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