Broadband spontaneous and stimulated luminescence of strongly doped AlxGa1-xN structures
P.A. Bokhan1, K.S. Zhuravlev1, D.E. Zakrevsky1,2, T.V. Malin1, I.V. Osinnykh1, N.V. Fateev1,3
1Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, 13, Ac. Lavrentieva ave., Novosibirsk, Russia, 630090
2Novosibirsk State Technical University, 20, K. Marksa av., Novosibirsk, 630073, Russia
3National Research Novosibirsk State University, 2, Pirogov Str., Novosibirsk, 630090, Russia
Keywords: структуры, люминесценция, усиление, structures, luminescence, amplification
Abstract
The spectral characteristics of the spontaneous and stimulated luminescence of strongly silicon-doped AlxGa1-xN structures with the concentration nSi > 1020 cm-3, at the optical pulse pumping by radiation with λ = 266 nm, are studied. The obtained dominant broadband radiation with a full width at half maximum ≈ 150 nm covers the whole visible spectral range. The radiation spectrum from the end of the structure is split into the narrow components determined by the formed flat waveguide mode structure. The results are indicative of the stimulated radiation character. The measured amplification coefficients values for different structures are in the range 20-70 cm-1.
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