POLARIZATION PYROMETRY OF LAYERED SEMICONDUCTOR STRUCTURES UNDER CONDITIONS OF LOW-TEMPERATURE TECHNOLOGICAL PROCESSES
I. A. Azarov1,2, V. A. Shvets1,2, S. A. Dulin1, N. N. Mikhailov1,2, S. A. Dvoretskii1,3, D. G. Ikusov1, I. N. Uzhakov1, S. V. Rykhlitskii1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 13
2Novosibirsk State University, 630090, Novosibirsk, ul. Pirogova, 2
3Tomsk State University, 634050, Tomsk, prosp. Lenina, 36
Keywords: тепловое излучение, поляризационная пирометрия, температура роста, лучистый теплообмен, молекулярно-лучевая эпитаксия КРТ, thermal radiation, polarization pyrometry, growth temperature, radiant heat transfer, molecular beam epitaxy of MCT
Abstract
Principal issues of using pyrometry for temperature monitoring is low-temperature processes in the technology of production of semiconductor structures are considered by an example of growing mercury-cadmium-telluride (MCT) layers on the GaAs substrate by the method of molecular beam epitaxy. Optical and thermophysical modes are proposed to describe the processes of radiant heat transfer in a vacuum chamber. Based on these models, it is demonstrated that radiation from the heater and the signal reflected from the chamber walls, which are comparable in magnitude with the measured radiation emitted by the sample, should be taken into account in interpreting data measured by a pyrometer. Methods of useful signal identification are found. Experiments on temperature measurement by a pyrometer mounted on the MCT growth chamber are performed. Results of these experiments are in good agreement with theoretical predictions.
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