NEGATIVE DIFFERENTIAL RESISTANCE IN HIGH–POWER LASER InGaN/GaN DIODES
V. T. Shamirzaev1, V. A. Gaisler1,2, T. S. Shamirzaev2,3
1Novosibirsk State Technical University, pr. Karla Marksa 20, Novosibirsk, 63007
2Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, prosp. Akademika Lavrent'eva 13, Novosibirsk, 630090
3Ural Federal University, 620002, Ekaterinburg, ul. Mira, 19
Keywords: лазерный диод, отрицательное дифференциальное сопротивление
Abstract
Negative differential resistance in an UV laser InGaN/GaN diode is demonstrated. Switching between the lower and upper branches of the S-shaped current-voltage characteristic leads to a change in the optical radiation power by six orders of magnitude as the current is increased from 3 to 15 mA.The occurrence of a negative differential resistance is explained by superlinear injection of charge carriers of the same sign into a high-resistivity InGaN quantum well.
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