An EPR Study of a Germanium-Vacancy Defect in Diamond
V.A. Nadolinny1, A.Yu. Komarovskikh1,2, Yu.N. Pal`yanov2,3, I.N. Kupriyanov2,3, Yu.M. Borzdov2,3, M.I. Rakhmanova1,2, O.P. Yur'eva1, S.L. Veber3,4
1Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3Novosibirsk National Research State University, Novosibirsk, Russia
4Institute "International Tomography Center", Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: алмаз, электронный парамагнитный резонанс, люминесценция, дефект, германий, diamond, EPR, luminescence, defect, germanium
Abstract
EPR and luminescence methods are used to study diamonds synthesized in the Mg0.9-Ge0.1-C system at high pressures and temperatures (HPHT). In the EPR spectra of the Ge doped samples, along with an impurity nitrogen atom (Р1 center) and a silicon-vacancy defect SiV0 (KUL1 center) a new paramagnetic center GeV with the spin S = 1 and D 3 d symmetry is detected. The studies performed show that this center has the structure of a double half-vacancy in the center of which there is a germanium atom. The observed GeV center is in the neutral charge state and is responsiblefor the 602 nm systems in the photoluminescence spectra.
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