CELL OF THE SILICON INTEGRATED READING MICROCIRCUIT WITH BUILT-IT ANALOG-TO-DIGITAL CONVERTER
A. V. Zverev, Yu. S. Makarov, E. A. Mikhant'ev, S. A. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, pr. Akademika Lavrent'eva, 13
Keywords: интегральная микросхема считывания сигнала, ИК-фотоприёмники, NEDT, КРТ, цифровое интегрирование, integral signal reading microcircuit, IR photodetectors, CMT, digital integration
Abstract
This paper describes the project of an accumulative cell of a silicon integral signal reading microcircuit with a built-in analog-to-digital converter for matrix IR photodetectors based on the Hg1 - x Cd x Te solid solutions with sensitivity in the spectral range from 8 to 10 microns. The cell is designed according to the silicon technology HCMOS8D of JSC NIIME "Mikron" (Moscow) with a project norm of 0.18 microns. The presented project of the cell has the size of 20 ´ 20 microns, and the number of bits in the built-in analog-to-digital converter is 15. When the average photocurrent is 7 nA and the integration time is 7.5 ms, the estimated value of the temperature difference equivalent to the noise is 4.6 mK.
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