SIMULATING THE CROSS SECTION OF INELASTIC SCATTERING OF ELECTRONS IN LAYERED STRUCTURES ON THE BASIS OF DIELECTRIC FUNCTIONS AND EXPERIMENTAL SPECTRA OF THE FILM AND SUBSTRATE
A. S. Parshin1, S. A. Kushchenkov1, O. P. Pchelyakov2, Yu. L. Mikhlin3
1Siberian State Aerospace University, pr. Im. Gazety “Krasnoyarskii Rabochii” 31, Krasnoyarsk, 660014 Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk, 630090 Russia
3Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, Akademgorodok, 50, str. 24, Krasnoyarsk, 660036 Russia
Keywords: электронная спектроскопия, сечение неупругого рассеяния отражённых электронов, длина свободного пробега электрона, electron spectroscopy, cross section of inelastic scattering of reflected electrons, mean free path of an electron
Abstract
This paper describes a technique of simulating the cross section of inelastic scattering of electrons in layered structures from the experimental spectra of the cross section of inelastic scattering of reflected electrons of structural components on the basis of the theoretical Yubero - Tougaard model of the cross section of inelastic scattering in a homogeneous medium and its generalization for the case of layered structures. This technique is tested by an example of studying the spectra of the cross section of inelastic scattering in a two-layer SiO2/Si structure.
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