EFFECT OF FORMATION OF GROOVES IN SAPPHIRE AND FILLING THEM WITH INDIUM UNDER THE ACTION OF LASER RADIATION
A. R. Novoselov1, A. G. Klimenko2
1Design and Technological Institute of Applied Microelectronics Siberian Branch, Russian Academy of Sciences, ul. Nikolaeva 8, Novosibirsk, 630090 Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
Keywords: indium, sapphire, laser radiation
Abstract
A groove coated with a layer of indium that fills the groove during its formation is generated on the lower surface of sapphire in a single process under the action of laser pulses. The process is performed by using a pulsed gas laser with a wavelength of 0.337 µm. The laser beam is focused through sapphire onto a surface coated with indium. The sapphire motion velocity is uniform, and the sapphire displacement during the time between two pulses is 10% of the light spot diameter. The groove is formed by using the scanning mode (multiple passes of laser radiation through the groove). The pulse energy density in a single pass is sufficiently large. The process is carried out in air. It is found that the optimal option is two passes when the specific resistance of indium in the groove is only 3.8 times greater than the resistance of pure (99.999%) indium bars.
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