CHARGE CARRIER TRANSPORT MECHANISM IN HIGH-Оє DIELECTRICS AND THEIR BASED RESISTIVE MEMORY CELLS
D. R. Islamov1,2, V. A. Gritsenko1,2, C. H. Cheng3, A. Chin4
1Rzhanov Institute of Semiconductor Physics. Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk, 630090 Russia
2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia
3National Taiwan Normal University, Taipei, 106 Taiwan ROC
4National Chiao Tung University, Hsinchu, 300 Taiwan ROC
Keywords: amorphous films, high-Оє dielectrics, hafnium oxide
Abstract
Current-voltage characteristics of thin dielectric films of HfOx in p-Si/HfOx /Ni structures are analyzed. Experimental results are compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionization model, and the Schottky effect at the Ni/HfOx interface. It is shown that in spite of the good qualitative description of the experimental results by all models, only the multiphonon trap ionization model provides a quantitative description of the data.
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