Home – Home – Jornals – Avtometriya 2014 number 3

Results of mathematical simulation of the hole spectrum and optical absorption in Si/Ge_xSi_{1 − x}/Si quantum wells formed on virtual Ge_ySi_{1 − y} substrates are presented. It is shown that the presence of elastic strains in such a system can significantly change the position of absorption lines in GeSi heterostructures. Selecting the quantum well and virtual substrate compositions can change the intersublevel absorption wavelength in the range from 6 to 12 µm for light polarized in the quantum well plane. When tensile strain is applied, the change in the hole transition intensity under the influence of the light polarized in the quantum well plane reaches a factor of 1.8. Compressive strain changes the intersubband transition intensity by a factor of 1.45.