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2014 year, number 3


E. A. Emelyanov1, D. F. Feklin1, M. A. Putyato1, B. R. Semyagin1, A. K. Gutakovskii1, V. A. Seleznev1, A. P. Vasilenko1, D. S. Abramkin1, O. P. Pchelyakov1, V. V. Preobrazhenskii1, N. Zhicuan2, N. Haiqiao2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
2Institute of Semiconductors, Chinese Academy of Sciences, 100083, N A35, QingHua East Road, Haidian District, Beijing, China
Keywords: molecular beam epitaxy, GaAs, Si


GaAs films on Si substrates miscut from the (001) plane by 6º in the [110] direction are grown by molecular beam epitaxy (MBE). GaAs films are grown both on the Si surface terminated by arsenic atoms and on thin pseudomorphic GaP/Si layers. The condition of formation of the As sublayer and the first monolayer of GaP on the Si surface is defined as the GaAs film orientation (001) or (00¯1). The processes of Si surface preparation and formation of the As sublayer and GaAs and GaP epitaxial layers are monitored by means of high-energy electron diffraction reflection (RHEED). The grown structures are investigated by methods of X-ray diffraction, atomic force microscopy (ATM), high-resolution transmission electron microscopy (HRTEM), and low-temperature luminescences. It is shown that the epitaxial film orientation affects both the surface morphology and its crystalline properties. Intense photoluminescence is obtained from the In0.17Ga0.83As quantum well structure grown on the GaAs/Si buffer layer.