MIS PHOTODIODE WITH AN InAs-BASED TUNNEL-TRANSPARENT OXIDE LAYER
V. G. Kesler, A. A. Guzev, A. P. Kovchavtsev, A. V. Tsarenko, Z. V. Panova
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrentieva 13, Novosibirsk, 630090 Russia
Keywords: indium arsenide, thin films, glow-discharge plasma, oxidation, tunnel MIS photodiode
Abstract
Results of studying the possibilities of passivating InAs surfaces by ultrathin oxide films (~3 nm) in a glow-discharge plasma and producing tunnel MIS photodiodes on this basis are presented together with results of investigating the kinetics of oxidation and the chemical composition of oxide films formed. This is the first time when anhysteretic dependences of the capacitance on the bias are observed for InAs-based MIS structures at the liquid nitrogen temperature in a wide field range (from −7 · 106 to +5 · 106 V/cm). MIS structures are IR-photosensitive in the current mode. The estimated values of detectability are D* = 2.6 · 1012-8.2 · 1012 cm·Hz1/2 · W−1 and D* = 1.5 · 1011 cm · Hz1/2 · W−1 at temperatures of 78 and 198 K, respectively. The ampere-watt sensitivity value at a temperature of 78 K is 0.98 A/W, and the quantum efficiency is 0.43 (with no antireflecting coating of the InAs substrate and sapphire window).
|
