Surface-Enhanced Raman Scattering by Semiconductor Nanostructures
A. G. Milekhin1,2, L. L. Sveshnikova1, T. A. Duda1, N. A. Yeryukov1, N. V. Surovtsev3, S. V. Adichtchev3, E. E. Rodyakina1, A. K. Gutakovskii1, A. V. Latyshev1, D. R. T. Zahnd4
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia
3Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Koptyuga 1, Novosibirsk, 630090 Russia
4Semiconductor Physics, Chemnitz University of Technology, D-09107, Chemnitz, Germany
Keywords: nanocrystals, nanowires, nanoclusters, phonons, localized surface plasmon, surface-enhanced Raman scattering, absorption
Abstract
Surface-enhanced Raman scattering by optical and surface phonons in CdS, GaN, and CuS nanocrystals, and AlN nanowires is detected and studied. It is found that the presence of metal (Ag, Au, and Pt) nanoclusters noticeably modifies the Raman spectra of the nanostructures and results in a resonant increase in the intensity of optical phonon modes in CdS and CuS nanocrystals or in the emergence of surface modes in GaN nanocrystals and AlN nanowires. It is shown that the frequencies of the surface optical phonon modes of the examined nanostructures are in good agreement with the theoretical values calculated within the framework of the dielectric continuum model.
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