STRUCTURE AND PROPERTIES OF FILMS BASED ON HfO2-Sc2O3 DOUBLE OXIDE
L. V. Yakovkina, T. P. Smirnova, V. O. Borisov, S. Jeong-hwan, N. B. Morozova, V. N. Kichai, A. V. Smirnov
Keywords: thin films, double oxides, vapor deposition
Pages: 764-768
Abstract
The results of the investigation of the chemical constitution and structure of (HfO2)x(Sc2O3)1-x thin films are reported. The films are obtained by chemical vapor deposition (CVD) from hafnium 2,2,6,6-tetramethyl-3,5-heptandionate (Hf(thd)4) and scandium 2,2,6,6-tetramethyl-3,5-heptandionate (Sc(thd)3) coordination compounds. It is demonstrated by powder X-ray diffraction and infrared spectroscopy that depending on the scandium content in the films the structure is changed from monoclinic to cubic. Voltage-capacity dependences of test Al/(HfO2)x(Sc2O3)1-x/Si structures are used to calculate the dielectric constant of the films. For the films with the cubic structure it is found that k = 21, while for the films with the monoclinic structure k = 9.
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