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2009 year, number 4

Optimization of the Dielectric Constant of a Blocking Dielectric in the Nonvolatile Memory Based on Silicon Nitride

Y. N. Novikov, V. A. Gritsenko, K. A. Nasyrov
Keywords: flash memory, blocking dielectric, silicon nitride
Pages: 80-84


It is shown that the blocking layer of the flash memory element based on silicon nitride has an optimal value of the dielectric constant, which allows the maximum memory window in the write/erase regime to be reached.