Dislocation Nucleation in SiGe Nanoscale Islands Formed during Heteroepitaxial Growth
V. A. Zinov'ev
Keywords: nanostructures, heteroepitaxy, dislocation nucleation, modeling
Pages: 60-65
Abstract
A model is proposed to predict the critical parameters (shape, size, element composition) of nanoislands for dislocation nucleation. The onset of plastic relaxation of three-dimensional islands formed during heteroepitaxy in the Stranski-Krastanov mode are considered theoretically for the Ge/Si(100) heterosystem as an example. The study is based on a combination of numerical and analytical approaches to the calculation of strains in three-dimensional island containing a dislocation. It is confirmed that dislocation nucleation in three-dimensional SiGe islands is not limited by the kinetic barrier.
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