HgCdTe Heterostructures on Si(310) Substrates for Infrared Photodetectors
M. V. Yakushev, D. V. Brunev, V. S. Varavin, S. A. Dvoretskii, A. V. Predein, I. V. Sabinina, Y. G. Sidorov, A. V. Sorochkin, A. O. Suslyakov
Keywords: mercury cadmium telluride, HgCdTe, silicon, heterostructures, molecular beam epitaxy, MBE, infrared detector, defects, photodiode
Pages: 23-31
Abstract
Molecular beam epitaxial growth of HgCdTe solid solutions on silicon substrates of 76.2 mm diameter was studied. Conditions for producing HgCdTe/Si(310) heterostructures for the spectral range of 3-5 μm which are suitable for fabricating high-quality devices were determined. A 4× 288 photodetector was fabricated by hybrid assembly of an array photosensitive element with a multiplexer. Results on the sensitivity and stability of this photodetector to thermal cycling are given.
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