Voltage-Current Characteristics of Diodes on MBE-Grown Hg0,78Cd0,22Te Layers
A. V. Yartsev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,
Novosibirsk, Russia E-mail: jartsev@ngs.ru
Pages: 27-32
Abstract
Results of measuring the voltage-current characteristics (VCCs) of diodes for IR detectors with the cutoff wavelength lc= 11 mm are presented. The diodes are based on variband Hg0,78Cd0,22Te layers grown by molecular beam epitaxy on semi-insulating GaAs substrates. It is found that diffusion current and generation current in the depletion layer of the p
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