Numerical simulation of thermal-physical processes accompanying multisilicon crystal growing by the method of Bridgman
V.S. Berdnikov1, M.V. Filippova1, B.A. Krasin2, and A.I. Nepomnyashchikh2
1Kutateladze Institute of Thermophysics SB RAS, Novosibirsk, Russia
2Vinogradov Institute of Geochemistry SB RAS, Irkutsk, Russia
Pages: 257-274
Abstract
Conjugate heat transfer was studied numerically at multisilicon production from flat-bottom crucible using a vertical version of the Bridgman
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