Application of stochastic analog method for study of fluctuation stage of blistering
A.L. Bondareva and G.I. Zmievskaya
Keldysh Institute of Applied Mathematics RAS, Moscow, Russia
Pages: 255-265
Abstract
Formation of vacancy-gaseous pores in crystalline lattice of metal is simulated using the method of stochastic analog; this method reduces the blistering phenomena to a random Markov
