ANALYSIS OF TEMPERATURE EFFECT ON GaAs PLANAR NANOWIRE GROWTH ON STRUCTURED Si-SiOX SUBSTRATES USING MONTE CARLO SIMULATION
S. V. Mantsurova1,2, N. L. Shwartz1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Keywords: planar nanowires, GaAs, silicon, simulation, Monte-Carlo
Abstract
This work is devoted to the search for conditions of stable unidirectional planar GaAs nanowires growth on Si(111) substrates using Monte Carlo simulation. The effect of temperature on the stability of the planar growth on a structured surface in form of trenchesis investigated. The influence of the nanowire growth front geometry on the probability of stable planar growth in trenches oriented along the [211 ] and [011 ]directions is demonstrated. The growth kinetics of planar and non-planar GaAs nanowires at different temperatures is analyzed. An increase in the probability of planar nanowirestable growth with increasing temperature is revealed. It is shown that the reason for the transition from planar to non-planar growth for any trench orientation is wetting of the upper part of the planar nanowire with a gallium droplet.
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