Features of MnBr2 laser high-frequency excitation with a semiconductor power source
P.I. Gembukh, D.V. Shiyanov, M.V. Trigub
V.E. Zuev Institute of Atmospheric Optics of Siberian Branch of the Russian Academy of Science, Tomsk, Russia
Keywords: metal vapor laser, high-frequency excitation, IR emission, semiconductor source, brightness amplifier
Abstract
Improving the frequency-energy characteristics of lasers is an important task associated with both fundamental problems and the implementation of new engineering solutions. Increasing the pulse repetition rate of active media based on metal vapor, in particular a manganese atom, is necessary for the creation of high-speed laser monitors. This paper analyzes radiation spectral characteristics of an active element based on manganese atom transitions excited by a high-frequency semiconductor source based on the LTD generator concept. Radiation with an average power of 250 mW, including visible and IR components, was recorded at a pulse repetition rate of 75 kHz. It was experimentally established that the visible component disappears at frequencies above 75 kHz, which had not been previously observed. At a pulse repetition rate of 125 kHz, the average radiation power was 200 mW. In the IR region, the largest contribution (> 50%) comes from radiation at a wavelength of 1291.37 nm. The results of the work can be used in visual-optical diagnostics of various processes in laser monitor.
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