Electrical Resistance of Copper under Conditions of Multiple Shock Compression, and Generation of Crystal Structure Defects
S. D. Gilev
Lavrentyev Institute of Hydrodynamics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: electrical resistance, copper, shock compression, crystal structure defects
Abstract
An experimental study of the electrical resistance of copper foil under repeated shock compression up to a pressure of 40 GPa was performed in several explosive systems: in a reflected shock wave, under compression in a rigid cage, and in a layered system producing a sequence of waves of increasing amplitude. An improved measuring cell design is proposed, significantly reducing the influence of parasitic eddy currents on the recorded voltage. Under shock compression, the electrical resistance of copper increases monotonically, but the rate of increase depends on the loading history. Under compression by a sequence of shock waves, the electrical resistance of the metal is lower than under compression by a single shock wave (at the same incident wave pressure in a dielectric cage). In this case, the main change in copper's electrical resistance occurs in the first shock wave. In subsequent waves, the electrical resistance also increases, but the final value is lower than in a single shock wave. An assessment of the concentration of defects in the crystalline structure of a copper specimen under complex loading was performed. With repeated compression, the defect concentration is lower than with a single compression (at the same wave pressure or deformation). This means that under complex shock loading, defects are generated predominantly in the early stages of compression, with only a relatively small increase in the number of defects occurring subsequently. Qualitatively, the defect concentration during complex shock loading is determined by the deformation of the material in the first shock wave.
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