OVERGROWTH OF N-POLAR INVERSION DOMAINS IN ALXGa1-XN LAYERS WITH DIFFERENT AL CONTENTS
I.V. Osinnykh1,2, T.V. Malin1, A.M. Gilinsky1, D.Yu. Protasov1,3, V.I. Vdovin1
1A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University,, Novosibirsk, Russia
3Novosibirsk State Technical University, Novosibirsk, Russia
Keywords: AlGaN, ammonia molecular beam epitaxy (MBE), scanning electron microscopy (SEM), transmission electron microscopy (TEM), ion etching, structural defects
Abstract
In this paper, we present the results of a study of AlxGa1-xN layers with different Al contents grown by ammonia molecular beam epitaxy on Al2O3 substrates using scanning electron microscopy and transmission electron microscopy. It is shown that the inversion domains from the AlN buffer layers do not grow to the film surface during further growth of AlxGa1-xN layers with Al contents x ≤ 0.2. In the AlxGa1-xN layers with 0.2 ≤ x ≤ 0.5, plateau-shaped defects extending to a height of more than 200 nm form above the inversion domains; at x ≥ 0.5, plateau-shaped defects extend through the entire AlxGa1-xN layers.
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