Home – Home – Jornals – Avtometriya 2025 number 6

Composite silicon (Si) layers containing a synthesized narrow-bandgap indium arsenide (InAs) phase are of interest from the viewpoint of extending the optical absorption region and photoresponse of Si to the near and mid-IR region (λ = 1-3.5 μm). In this work, we investigate single-crystal Si layers subjected to sequential implantation with In⁺ and As⁺ ions followed by thermal annealing in a furnace (solid-phase crystallization) or pulsed nanosecond annealing with a C⁺/H⁺ ion beam (liquid-phase crystallization). By means of scanning electron microscopy, secondary ion-mass spectrometry, x-ray diffraction, optical infrared spectroscopy, and photoconductivity methods, the structural, optical, and photoelectric properties of the composite layers are studied. It is shown that pulsed annealing leads to deep diffusion of As atoms into Si to 1 μm with the formation of a solid solution Si:As, and the In impurity is pushed to the surface. Thermal annealing leads to a slight redistribution of impurities and to the formation of secondary phases of InAs and In₂O₃. In both cases, a high electron concentration (~ 2 × 10²⁰ cm^-3) is achieved, and an intense absorption band with a maximum at 3.6 μm is detected. The photoresponse spectra of the mesa diodes at 300 K show a photosensitivity region of 0.5-1.2 μm, comparable with a typical Si photodiode. No photoresponse was detected in the region of 1.2-2.4 μm.