Thermal linear expansion coefficient for monocrystal silicon
Yu.M. Kozlovskii, S.V. Stankus
Kutateladze Institute of Thermophysics SB RAS, Novosibirsk, Russia
Keywords: dilatometric method, silicon, monocrystal, thermal linear expansion coefficient, modulus of elongation, high and low temperatures
Abstract
The paper presents the results of dilatometric measurements for thermal expansion of monocrystal silicon for the temperature range of 100 - 1373 K. The temperature dependencies for thermal properties of material are calculated. The look-up tables for a broad range of temperatures for a solid material are calculated.
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