Gas-jet synthesis of diamond coatings on silicon substrates
A.A. Emelyanov, M.Yu. Plotnikov, N.I. Timoshenko, I.B. Yudin
Kutateladze Institute of Thermophyhsics SB RAS, Novosibisrk, Russia
Keywords: diamond, gas phase synthesis, microwave discharge, gas-jet deposition, silicon, argon
Abstract
The synthesis of diamond coatings on silicon substrates using a gas-jet method, which uses a high-speed jet to transport a gas mixture activated in a microwave discharge, is studied. The coatings are synthesized from a mixture of hydrogen, methane and argon. The possibility of maintaining the integrity of the silicon substrate under conditions of gas-jet deposition at high temperatures is shown. The rate of diamond synthesis on a silicon substrate exceeded the one, achieved earlier in gas-jet experiments with activation in microwave plasma without adding argon, as well as during deposition from a hydrogen-methane-argon mixture at lower substrate temperatures.
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